PMST4401,115 datasheet

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Маркировка

PMST4401,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PMST4401,115 Collector- Emitter Voltage Vceo Max: 40 V Configuration: Single Current - Collector (ic) (max): 600mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 1V Emitter- Base Voltage Vebo: 6 V Frequency - Transition: 250MHz ID_COMPONENTS: 1949497 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 0.6 A Maximum Operating Frequency: 250 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-70-3, SOT-323-3 Power - Max: 200mW Power Dissipation: 200 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 750mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 40V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 0.6 A Gain Bandwidth Product fT: 250 MHz DC Collector/Base Gain hfe Min: 20 at 0.1 mA at 1 V, 40 at 1 mA at 1 V, 80 at 10 mA at 1 V, 100 at 150 mA at 1 V, 40 at 500 mA at 2 V DC Current Gain hFE Max: 20 at 0.1 mA at 1 V Maximum Power Dissipation: 200 mW Factory Pack Quantity: 3000 Part # Aliases: PMST4401 T/R Other Names: 934026880115, PMST4401 T/R
Количество страниц

7 шт.
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67,43 KB